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APM4532
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
*
N-Channel 30V/5A, RDS(ON)=35m(typ.) @ VGS=10V RDS(ON)=60m(typ.) @ VGS=4.5V
Pin Description
S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2
*
P-Channel -30V/-3.5A, RDS(ON)=85m(typ.) @ VGS=-10V RDS(ON)=135m(typ.) @ VGS=-4.5V
SO-8
* * *
Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package
G2 G1 D1 D1 S2
Applications
S1 D2 D2
*
Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
N-Channel MOSFET
P-Channel MOSFET
Ordering and Marking Information
APM4532
Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150C Handling Code TR : Tape & Reel
APM4532 K :
APM4532 XXXXX
XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 1 www.anpec.com.tw
APM4532
Absolute Maximum Ratings
Symbol VDSS VGSS ID
*
(TA = 25C unless otherwise noted)
N-Channel 30 25 5 20 P-Channel -30 25 -3.5 -20 2 0.8 150 -55 to 150 62.5 C C C/W A V Unit
Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous Maximum Drain Current - Pulsed TA=25C Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient TA=100C
IDM PD TJ TSTG RjA
2 0.8
W
* Surface Mounted on FR4 Board, t 10 sec.
Electrical Characteristics
Symbol Static BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Parameter
(TA = 25C unless otherwise noted)
APM4532 Unit Min. Typ. Max. N-Ch 30 -30 1 -1 1 -1 1.5 -1.5 2 -2 100 100 35 60 P-Ch N-Ch P-Ch 85 135 0.7 -0.7 45 70 95 150 1.3 -1.3 V m nA
Test Condition
VGS=0V , IDS=250A VDS=24V , VGS=0V VDS=-24V , VGS=0V VDS=VGS , IDS=250A VDS=VGS , IDS=-250A
P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch
V A V
Gate Leakage Current
VGS=25V , VDS=0V VGS=10V , IDS=5A
RDS(ON)
a
Drain-Source On-state Resistance
VGS=4.5V , IDS=4A VGS=-10V , IDS=-3.5A VGS=-4.5V , IDS=-2.5A
VSD
a
Diode Forward Voltage
ISD=1.7A , VGS=0V ISD=-1.7A , VGS=0V
Notes
a
: Pulse test ; pulse width 300s, duty cycle 2%
Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002
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APM4532
Electrical Characteristics (Cont.)
Symbol Dynamic Q g Qgs Qgd td(ON) T r td(OFF) T f Ciss Coss Crss
a
(TA = 25C unless otherwise noted)
APM4532 Unit Min. Typ. Max. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 7 8 4.7 2 1.1 1 10 8 8 7 20 15 5 7 376 495 115 130 58 60 pF 15 15 20 20 28 28 15 18 ns 15 15 nC
Parameter
Test Condition
Total Gate Charge
N-Channel VDS=10V , IDS= 5A VGS=4.5V P-Channel VDS=-10V , IDS=-3.5A VGS=-4.5V N-Channel VDD=10V , IDS=1A , VGEN=4.5V , RG=10 P-Channel
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
VDD=-10V , IDS=-1A , VGEN=-4.5V , RG=10
Turn-off Fall Time Input Capacitance
VGS=0V Output Capacitance Reverse Transfer Capacitance VDS=15V Frequency=1.0MHz
Notes
a
: Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002
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APM4532
Typical Characteristics
N-Channel
Output Characteristics
20 20.0 17.5
VGS=5,6,7,8,9,10V
Transfer Characteristics
ID-Drain Current (A)
15
VGS=4V
ID-Drain Current (A)
15.0 12.5 10.0 7.5 5.0 2.5
TJ=25C TJ=125C TJ=-55C
10
5
VGS=3V
0
0
1
2
3
4
5
0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
IDS=250uA
On-Resistance vs. Drain Current
0.10 0.09
VGS(th)-Threshold Voltage (V) (Normalized)
RDS(ON)-On-Resistance ()
1.25 1.00 0.75 0.50 0.25 0.00 -50
0.08
VGS=4.5V
0.07 0.06 0.05 0.04 0.03 0.02 0.01
VGS=10V
-25
0
25
50
75
100 125 150
0.00
0
2
4
6
8
10 12 14 16 18 20
Tj - Junction Temperature (C)
ID - Drain Current (A)
Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002
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APM4532
Typical Characteristics (Cont.)
N-Channel
On-Resistance vs. Gate-to-Source Voltage
0.20 0.18
ID=5A
On-Resistance vs. Junction Temperature
2.0
VGS=10V 1.8 ID=5A
RDS(ON)-On-Resistance ()
0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 2 3 4 5 6 7 8 9 10
RDS(ON)-On-Resistance () (Normalized)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (C)
Gate Charge
10 700 VDS=10 V 8 IDS= 5 A
Capacitance
Frequency=1MHz
VGS-Gate-Source Voltage (V)
600
6
Capacitance (pF)
500 400 300 200
Ciss
4
2 100 0 0 2 4 6 8 10 12 14 0
Coss Crss
0
5
10
15
20
QG - Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002
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APM4532
Typical Characteristics (Cont.)
N-Channel
Source-Drain Diode Forward Voltage
20 10 25 30
Single Pulse Power
IS-Source Current (A)
1
TJ=150C
TJ=25C
Power (W)
1.2 1.4
20 15 10
0.1
5 0 0.01
0.0
0.2
0.4
0.6
0.8
1.0
0.1
1
10
30
VSD -Source-to-Drain Voltage (V)
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
2
Normalized Effective Transient Thermal Impedance
1
Duty Cycle=0.5
D=0.2 D=0.1
0.1
D=0.05
D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=62.5C/W 3.TJM-TA=PDMZthJA
SINGLE PULSE
0.01 1E-4
1E-3
0.01
0.1
1
10
30
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002
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APM4532
Typical Characteristics
P-Channel
Output Characteristics
20 20 18
Transfer Characteristics
-ID-Drain Current (A)
16 14 12 10 8 6 4
-ID-Drain Current (A)
15
-VGS=6,7,8,9,10V -VGS=5V
TJ=25C TJ=125C TJ=-55C
10
-VGS=4V
5
-VGS=3V
2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0
0
1
2
3
4
-VDS - Drain-to-Source Voltage (V)
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
-IDS=250uA
On-Resistance vs. Drain Current
0.250 0.225 0.200 0.175 0.150 0.125 0.100 0.075 0.050 0.025
-VGS=10V -VGS=4.5V
-VGS(th)-Threshold Voltage (V) (Normalized)
1.25 1.00 0.75 0.50 0.25 0.00 -50
RDS(ON)-On-Resistance ()
-25
0
25
50
75
100 125 150
0.000
0
1
2
3
4
5
6
7
8
9
10
Tj - Junction Temperature (C)
-ID - Drain Current (A)
Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002
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APM4532
Typical Characteristics (Cont.)
P-Channel
On-Resistance vs. Gate-to-Source Voltage
0.30
-ID=3.5A
On-Resistance vs. Junction Temperature
1.8
-VGS=10V -ID=3.5A
RDS(ON)-On-Resistance ()
0.25 0.20 0.15 0.10 0.05 0.00
RDS(ON)-On-Resistance () (Normalized)
2 3 4 5 6 7 8 9 10
1.6 1.4 1.2 1.0 0.8 0.6
0.4 -50
-25
0
25
50
75
100 125
150
-VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (C)
Gate Charge
10
800
Capacitance
Frequency=1MHz
-VGS-Gate-Source Voltage (V)
9 8 7 6 5 4 3 2 1 0 0
-VDS=10 V -IDS= 3.5 A
700
Capacitance (pF)
600 500 400 300 200 100 0
Ciss
Coss Crss
1
2
3
4
5
6
7
8
0
5
10
15
20
QG - Gate Charge (nC)
-VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002
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APM4532
Typical Characteristics (Cont.)
P-Channel
Source-Drain Diode Forward Voltage
20 10 30 25 20 15 10 0.1 5 0 0.01
Single Pulse Power
-IS-Source Current (A)
1
TJ=150C TJ=25C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Power (W)
0.1
1
10
30
-VSD -Source-to-Drain Voltage (V)
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
2
Normalized Effective Transient Thermal Impedance
1
Duty Cycle=0.5
D=0.2 D=0.1
0.1
D=0.05
D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=62.5C/W 3.TJM-TA=PDMZthJA
SINGLE PULSE
0.01 1E-4
1E-3
0.01
0.1
1
10
30
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002
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APM4532
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
E
H
e1 D
e2
A1
A
1 L
0.004max.
Dim A A1 D E H L e1 e2 1
Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013
0.015X45
Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8
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APM4532
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Peak temperature
183C Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max.
60 seconds 215-219C or 235 +5/-0C 10 C /second max.
Package Reflow Conditions
pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C
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Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002
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APM4532
Reliability test program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles
Carrier Tape & Reel Dimensions
t E Po P P1 D
F W
Bo
Ao
D1 T2
Ko
J C A B
T1
Application
A 330 1
B 62 +1.5 D
C 12.75+ 0.15 D1
J 2 0.5 Po
T1 12.4 0.2 P1 2.0 0.1
T2 2 0.2 Ao 6.4 0.1
W 12 0. 3 Bo 5.2 0. 1
P 8 0.1 Ko
E 1.750.1 t
SOP- 8
F 5.5 1
1.55 +0.1 1.55+ 0.25 4.0 0.1
2.1 0.1 0.30.013
Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002
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APM4532
Cover Tape Dimensions
Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002
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